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Random Access Memory - traduction vers néerlandais
![VEB Carl Zeiss Jena]] in 1989](https://commons.wikimedia.org/wiki/Special:FilePath/Bundesarchiv Bild 183-1989-0406-022, VEB Carl Zeiss Jena, 1-Megabit-Chip.jpg?width=200 "VEB Carl Zeiss Jena]] in 1989")
.PNG?width=200 "DRAM Cell (1 Transistor and one capacitor)")
![These IBM [[tabulating machine]]s from the mid-1930s used [[mechanical counter]]s to store information](https://commons.wikimedia.org/wiki/Special:FilePath/Early SSA accounting operations.jpg?width=200 "These IBM [[tabulating machine]]s from the mid-1930s used [[mechanical counter]]s to store information")
![heatsink]]](https://commons.wikimedia.org/wiki/Special:FilePath/Random Access Memory HyperX.jpg?width=200 "heatsink]]")
.svg?width=200 "SRAM Cell (6 Transistors)")
![desktop RAM]].](https://commons.wikimedia.org/wiki/Special:FilePath/Samsung-1GB-DDR2-Laptop-RAM.jpg?width=200 "desktop RAM]].")
![server]]s.](https://commons.wikimedia.org/wiki/Special:FilePath/Swissbit 2GB PC2-5300U-555.jpg?width=200 "server]]s.")
![[[MoSys]] MDRAM MD908](https://commons.wikimedia.org/wiki/Special:FilePath/MoSys MD908.png?width=200 "[[MoSys]] MDRAM MD908")
![1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]](https://commons.wikimedia.org/wiki/Special:FilePath/Olivetti JP90 - Toshiba TC518129CFWL-80 on controller-8514.jpg?width=200 "1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]")
![NMOS]] DRAM cell. It was patented in 1968.](https://commons.wikimedia.org/wiki/Special:FilePath/Original 1T1C DRAM design.svg?width=200 "NMOS]] DRAM cell. It was patented in 1968.")
![die]] of a Samsung DDR-SDRAM 64MBit package](https://commons.wikimedia.org/wiki/Special:FilePath/SAMSUNG@DDR-SDRAM@64MBit@K4D62323HA-QC60 Stack-DSC03539-DSC03556 - ZS-DMap.jpg?width=200 "die]] of a Samsung DDR-SDRAM 64MBit package")
![A 512 MBit [[Qimonda]] GDDR3 SDRAM package](https://commons.wikimedia.org/wiki/Special:FilePath/Sapphire Ultimate HD 4670 512MB - Qimonda HYB18H512321BF-10-93577.jpg?width=200 "A 512 MBit [[Qimonda]] GDDR3 SDRAM package")
Wikipédia
Random-access memory (RAM; ) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
RAM contains multiplexing and demultiplexing circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM devices often have multiple data lines and are said to be "8-bit" or "16-bit", etc. devices.
In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed. The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM).
Non-volatile RAM has also been developed and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of limitations on them. These include most types of ROM and a type of flash memory called NOR-Flash.
Use of semiconductor RAM dated back to 1965, when IBM introduced the monolithic (single-chip) 16-bit SP95 SRAM chip for their System/360 Model 95 computer, and Toshiba used discrete DRAM memory cells for its 180-bit Toscal BC-1411 electronic calculator, both based on bipolar transistors. While it offered higher speeds than magnetic-core memory, bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory.
MOS memory, based on MOS transistors, was developed in the late 1960s, and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970.
Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.
